Toshiba Adds Modified NAND Flash Memory for Easier Integration in Advanced Cell Phones With Complex Memory Subsystems
'Chip Enable Don't Care' NAND Allows Mobile Phone Processors to Communicate More Easily With Complex Memory Subsystems That Include NOR, SRAM and NAND Memories
IRVINE, Calif., April 14 /PRNewswire/ -- Continuing its pioneering tradition in flash memory development, Toshiba America Electronic Components, Inc. (TAEC)* with its parent company Toshiba Corporation (Toshiba) today announced a modified NAND flash memory designed to simplify integration of higher density memory solutions into advanced cell phones. Called "Chip Enable Don't Care" NAND, the new memory allows inexpensive NAND flash to be more easily combined in cell phones with other memory such as NOR, SRAM and Pseudo SRAM to provide a simpler, more affordable alternative to meet the increased memory requirements of today's feature-rich phones.
"High-density NAND flash is approximately 40 to 50 percent of the cost of NOR flash, offers faster programming and erase times, and requires less space because of its small cell size," said Brian Kumagai, business development manager, NAND Flash, for TAEC. "By simplifying the design challenge of integrating a memory subsystem that combines SRAM, PSRAM, NOR and NAND, our new 'Chip Enable Don't Care' NAND helps make NAND flash an attractive alternative to cell phone designers for the application and storage memory required in advanced mobile phones."
"NAND flash memory is a cost-effective choice for the local storage memory in cell phones required to support additional applications and features found on advanced phones," said Alan Niebel, CEO of Web-Feet Research, a market research firm that specializes in non-volatile memory. "We expect revenue from local storage memory required in cell phones to increase from $150 million in 2003 to $1.4 billion in 2006."
One of the challenges facing designers of advanced cell phones is the memory subsystem required to support auxiliary applications such as Internet browsing, text messaging, games and even digital camera capabilities. Not long ago, a typical talk-only mobile phone utilized 4 Megabit (Mb) to 8Mb of low- power SRAM for phone number data storage and 16Mb of NOR flash for code storage. The additional applications found in today's feature-rich mobile phones have increased typical memory requirements to 8Mb to 16Mb of low-power SRAM for data backup, 32Mb to 128Mb of DRAM or Pseudo SRAM for movie or music working area, 128Mb to 256Mb high speed NOR flash for bootable code storage and 128Mb to 256Mb or more additional memory for application software and storage.
With its lower cost and small cell size, NAND flash is an attractive alternative for the additional storage memory in these phones. However, use of conventional NAND flash in many systems required extra design effort and/or the use of glue logic. Conventional NAND flash requires that the chip enable signal line be asserted low during the entire read cycle which will prevent the processor from communicating with other devices on the same bus. Glue logic or more complex memory bus designs were required to work around this characteristic, which is one of the reasons that NAND flash has not been widely adopted for storage memory in cell phones.
The new Chip Enable Don't Care NAND allows the chip enable signal to be deasserted during the "read busy" period. This means that the microprocessor can communicate with other devices on the bus such as SRAM, PSRAM or NOR flash while the NAND retrieves the information requested. The modifications in this new NAND flash device allow the read command to continue even if the chip enable signal is deasserted, leading to the name "Chip Enable Don't Care." This feature also allows the processor to communicate with I/O devices during the "read busy" period.
Toshiba's Chip Enable Don't Care NAND is available in 128Mb and 256B densities, designated TC581282AXB and TC582562AXB. The 3.3V flash memory devices are available in BGA or stacked multi-chip packaging (MCP) combined with other memory products to support a variety of applications. Toshiba offers a wide selection of MCPs that combine NOR, SRAM, NAND, and Pseudo SRAM to provide flexible memory solutions for mobile electronics devices. MCP packaging provides a smaller footprint and lighter weight solution specifically designed to meet the needs of cellular phones.
Product Specifications
Part Number TC581282AXB TC582562AXB
Configuration 528 bytes x 32 pages 528bytes x 32 pages
x 1024 blocks (128Mb) x 2048 blocks (256Mb)
Power Supply VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Page Size 528 bytes 528 bytes
Block Size (16K + 512) bytes (16K +512) bytes
Programming
Time (per page) 200 microseconds (us) 200 microseconds (us)
typical typical
Erase Time
(per block) 2 milliseconds (ms) 2 milliseconds (ms)
typical typical
Access Time 25us first access 25us first access
(maximum); 50 nanoseconds (ns) (maximum);
serial access (minimum) 50 nanoseconds (ns)
serial access
(minimum)
Package 7 x 10 BGA 9 x 11 BGA
Measures 7 x 10 Measures 9 x 12
x 1.2 millimeters or MCP x 1.2 millimeters
or MCP
Pricing and Availability
Samples of the 128Mb TC581282AXB and 256Mb TC582562AXB Chip Enable Don't Care NAND flash devices are available now, priced at $7.00 and $12.00 each, respectively. Toshiba's Chip Enable Don't Care NAND devices will be produced at the company's advanced manufacturing facility at Yokkaichi, Japan.
NAND Flash Background
Toshiba is a recognized pioneer in flash technology. Toshiba invented NAND flash technology in 1989. NAND flash is becoming one of the leading technologies for solid state storage applications because of its high-speed programming capability, high-speed erasing, small block size and low cost. The sequential nature (serial access) of NAND-based flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND flash memory products are optimized for general solid state storage, image file storage and audio for applications such as solid state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage. These newly announced devices for use in mobile electronics products complement the company's current solid state storage solutions.
Toshiba's existing line-up of NAND flash memories includes an array of devices available in Thin Small Outline Package (TSOP), ranging in densities from 64-Megabit (Mb) to 2-Gigabit (Gb). Toshiba also offers a wide range of small-form factor storage solutions optimized for general solid, image file and audio storage including CompactFlash(TM), Smart Media(TM), SD Card, Multi Media Card (MMC) and ATA Card devices. For industrial use, Toshiba's NAND Flash Drive, announced in 2001, offers 2GB storage capacity compatible with hard disk drives.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes semiconductors, flash memory-based storage solutions, optical communication devices, displays and rechargeable batteries for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba, the third largest semiconductor company worldwide in terms of global sales for the year 2002 according to Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's website at chips.toshiba.com . For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice.
CompactFlash is a trademark of SanDisk Corporation. SmartMedia is a trademark of Toshiba Corporation. All other trademarks and tradenames held within are the properties of their respective holders.
CONTACT: Lisa Nemec of Toshiba America Electronic Components, Inc.,
+1-949-455-2293, lisa.nemec@taec.toshiba.com; or Jan Johnson of MultiPath
Communications, +1-714-633-4008, jan@multipathcom.com, for Toshiba America
Electronic Components, Inc.
Web site: http://www.chips.toshiba.com/
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